SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM REVERSE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | GLASS |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | GATE |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.000 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.300 INCHES MAXIMUM |
OVERALL DIAMETER | 0.104 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |
SPECIFICATION/STANDARD DATA | 80131-RELEASE5303 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
NONDEFINITIVE SPEC/STD DATA | 1N5160 TYPE |