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National Stock Number: 5961-00-806-8309
Federal Supply Class: 5961
National Item Identification Number: 008068309
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
1261915-70 | 19315 | HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER BENDIX NAVIGATION AND CONTROL SYSTEMS | 1532887-4 | 77272 | THE BOEING COMPANY | 1532887-4 | 83298 | ALLIED SIGNAL INC AEROSPACE EQUIPMENT SYSTEMS EATONTOWN SITE | 2N657A | 01295 | TEXAS INSTRUMENTS INCORPORATED | 2N657A | 03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT | 2N657A | 03877 | GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP | 2N657A | 07256 | SILICON TRANSISTOR CORP SUB OF BBF INC | 2N657A | 07688 | JOINT ELECTRON DEVICE ENGINEERING COUNCIL | 2N657A | 12045 | ELECTRONIC TRANSISTORS CORP | 2N657A | 24454 | GENERAL ELECTRIC CO ELECTRONIC COMPONENTS DIVISION OF ELECTRONIC ATOMIC AND DEFENSE SYSTEMS GROUP | 2N657A | 30043 | SOLID STATE DEVICES, INC | 2N657A | 33173 | MPD COMPONENTS, INC. | 2N657A | 34156 | OSI OPTOELECTRONICS, INC | 2N657A | 55464 | CENTRAL SEMICONDUCTOR, LLC | 2N657A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 2N657A | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | 2N657A | 89473 | GENERAL ELECTRIC DISTRIBUTING CORP | 2N657AA | C7191 | ADELCO ELEKTRONIK GMBH | 7901841-001 | 24617 | GENERAL MOTORS CORP | C1619 | 98869 | HOWELL INSTRUMENTS, INC. | GT816BK1 | 26512 | NORTHROP GRUMMAN SYSTEMS CORPORATION | GTB816BK1 | 26512 | NORTHROP GRUMMAN SYSTEMS CORPORATION | RELEASE3021 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
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Techincal Specification:
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR | CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM BASE CURRENT, DC AND 500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INCLOSURE MATERIAL | METAL | INTERNAL CONFIGURATION | JUNCTION CONTACT | OVERALL DIAMETER | 0.370 INCHES MAXIMUM | OVERALL LENGTH | 0.260 INCHES MAXIMUM | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 1.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN | SPECIFICATION/STANDARD DATA | 80131-RELEASE3021 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | TERMINAL LENGTH | 1.500 INCHES MINIMUM | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
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