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National Stock Number: 5961-00-780-8368
Federal Supply Class: 5961
National Item Identification Number: 007808368
Description: TRANSISTOR
Detail: An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
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Manufacturer Information:
1505321 | 15476 | COMPAQ FEDERAL LLC | 1853-0081 | 1LQK8 | KEYSIGHT TECHNOLOGIES, INC. | 1853-0081 | 28480 | HEWLETT-PACKARD COMPANY | 1853-0081 | 7ZXR5 | KEYSIGHT TECHNOLOGIES INC | 200142580 | F7078 | ZODIAC DATA SYSTEMS | 2N4258 | 01295 | TEXAS INSTRUMENTS INCORPORATED | 2N4258 | 04454 | SENSOR SYSTEMS, L.L.C. | 2N4258 | 04713 | FREESCALE SEMICONDUCTOR, INC. | 2N4258 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | 2N4258 | 13715 | FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD | 2N4258 | 1MY79 | INTERSIL COMMUNICATIONS INC. | 2N4258 | 27014 | NATIONAL SEMICONDUCTOR CORPORATION | 2N4258 | 34371 | RENESAS ELECTRONICS AMERICA INC | 2N4258 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | 2N4258 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | 40002358-000 | 96238 | DNE TECHNOLOGIES, INC | 5961007808368 | SCY13 | E.C.A ETABLISSEMENT CENTRALD'APPROVISIONNEMENT DES FORCES ARMEE | DEC4258 | 15476 | COMPAQ FEDERAL LLC | JAN2N4258 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | QBPS-04258 | 58900 | GIGA-TRONICS INCORPORATED | RELEASE 5285 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | S22079 | 07263 | FAIRCHILD SEMICONDUCTOR CORP | SPS246 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
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Techincal Specification:
CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC | FEATURES PROVIDED | HERMETICALLY SEALED CASE | INCLOSURE MATERIAL | METAL | INTERNAL CONFIGURATION | JUNCTION CONTACT | OVERALL DIAMETER | 0.210 INCHES MAXIMUM | OVERALL LENGTH | 0.250 INCHES MAXIMUM | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION | SEMICONDUCTOR MATERIAL | SILICON | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP | SPECIFICATION/STANDARD DATA | 80131-RELEASE5285 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION | TERMINAL CIRCLE DIAMETER | 0.100 INCHES MAXIMUM | TERMINAL LENGTH | 0.400 INCHES MINIMUM | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
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