5961-00-780-8367 SEMICONDUCTOR DEVICE,DIODE Index 5961-00-780-8372 TRANSISTOR

National Stock Number:
5961-00-780-8368

Federal Supply Class:
5961

National Item Identification Number:
007808368

Description:
TRANSISTOR

Detail:
An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.


Manufacturer Information:
150532115476COMPAQ FEDERAL LLC
1853-00811LQK8KEYSIGHT TECHNOLOGIES, INC.
1853-008128480HEWLETT-PACKARD COMPANY
1853-00817ZXR5KEYSIGHT TECHNOLOGIES INC
200142580F7078ZODIAC DATA SYSTEMS
2N425801295TEXAS INSTRUMENTS INCORPORATED
2N425804454SENSOR SYSTEMS, L.L.C.
2N425804713FREESCALE SEMICONDUCTOR, INC.
2N425807263FAIRCHILD SEMICONDUCTOR CORP
2N425813715FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD
2N42581MY79INTERSIL COMMUNICATIONS INC.
2N425827014NATIONAL SEMICONDUCTOR CORPORATION
2N425834371RENESAS ELECTRONICS AMERICA INC
2N425880131ELECTRONIC INDUSTRIES ASSOCIATION
2N425881349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
40002358-00096238DNE TECHNOLOGIES, INC
5961007808368SCY13E.C.A ETABLISSEMENT CENTRALD'APPROVISIONNEMENT DES FORCES ARMEE
DEC425815476COMPAQ FEDERAL LLC
JAN2N425881349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
QBPS-0425858900GIGA-TRONICS INCORPORATED
RELEASE 528580131ELECTRONIC INDUSTRIES ASSOCIATION
S2207907263FAIRCHILD SEMICONDUCTOR CORP
SPS24604713FREESCALE SEMICONDUCTOR, INC.


Techincal Specification:
CURRENT RATING PER CHARACTERISTIC50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC
FEATURES PROVIDEDHERMETICALLY SEALED CASE
INCLOSURE MATERIALMETAL
INTERNAL CONFIGURATIONJUNCTION CONTACT
OVERALL DIAMETER0.210 INCHES MAXIMUM
OVERALL LENGTH0.250 INCHES MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT125.0 CELSIUS JUNCTION
MOUNTING METHODTERMINAL
POWER RATING PER CHARACTERISTIC200.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION
SEMICONDUCTOR MATERIALSILICON
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELEASE5285 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION
TERMINAL CIRCLE DIAMETER0.100 INCHES MAXIMUM
TERMINAL LENGTH0.400 INCHES MINIMUM
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 12.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 4.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN


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