| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
| CURRENT RATING PER CHARACTERISTIC | 1.00 MICROAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, EMITTER OPEN |
| POWER RATING PER CHARACTERISTIC | 800.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| INCLOSURE MATERIAL | METAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| MOUNTING METHOD | TERMINAL |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-5 |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |