SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 4.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND |
| 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN |
CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 2.00 AMPERES MAXIMUM BASE CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 40.0 WATTS MAXIMUM COLLECTOR POWER DISSIPATION |
INCLOSURE MATERIAL | PLASTIC |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.635 INCHES MINIMUM AND |
| 0.645 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | ANODE |
OVERALL HEIGHT | 0.125 INCHES MINIMUM AND |
| 0.135 INCHES MAXIMUM |
OVERALL WIDTH | 0.495 INCHES MINIMUM AND |
| 0.505 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |