COMPONENT NAME AND QUANTITY | 1 SEMICONDUCTOR DEVICE DIODE AND 1 TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC SINGLE TRANSISTOR |
CURRENT RATING PER CHARACTERISTIC | 6.00 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT SINGLE SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | METAL |
OVERALL DIAMETER | 0.362 INCHES MAXIMUM |
OVERALL LENGTH | 0.259 INCHES MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION |
MOUNTING METHOD | TERMINAL |
POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION SINGLE TRANSISTOR |
SEMICONDUCTOR MATERIAL | SILICON SINGLE SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON SINGLE TRANSISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN SINGLE TRANSISTOR |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL LENGTH | 0.750 INCHES MINIMUM |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |