COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 100.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
INCLOSURE MATERIAL | CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.230 INCHES MINIMUM AND |
| 0.300 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.085 INCHES MINIMUM AND |
| 0.107 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
COMPONENT FUNCTION RELATIONSHIP | MATCHED |
FUNCTION FOR WHICH DESIGNED | DETECTOR AND |
| MIXER |
SPECIAL FEATURES | 3.0 GHZ TEST FREQUENCY; 6.0 DECIBEL NOISE FIGURE |