SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.00 MAXIMUM DRAIN TO GATE VOLTAGE AND |
| 50.00 MAXIMUM GATE TO SOURCE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM GATE CURRENT AND |
| 8.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT |
POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.210 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-71 |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/430 GOVERNMENT SPECIFICATION |
PART NAME ASSIGNED BY CONTROLLING AGENCY | TRANSISTOR, DUAL FIELD EFFECT, N-CHANNEL, SILICON |
SPEC/STD CONTROLLING DATA | |
MANUFACTURERS CODE | 81349 |
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | JANTX2N5545 |
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE | MIL-PRF-19500/430 |