| COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 125.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| 20.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 450.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 1ST SEMICONDUCTOR DEVICE DIODE |
| 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 2ND SEMICONDUCTOR DEVICE DIODE |
| 150.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, REPETITIVE, MAXIMUM PEAK TOTAL VALUE 3RD SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 500.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE DIODE |
| 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
| 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 3RD SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-35 1ST SEMICONDUCTOR DEVICE DIODE |
| DO-7 2ND SEMICONDUCTOR DEVICE DIODE |
| DO-7 3RD SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM 1ST SEMICONDUCTOR DEVICE DIODE |
| 1.000 INCHES MINIMUM 2ND SEMICONDUCTOR DEVICE DIODE |
| 1.000 INCHES MINIMUM 3RD SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.160 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| 0.265 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| 0.265 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.075 INCHES NOMINAL 1ST SEMICONDUCTOR DEVICE DIODE |
| 0.096 INCHES NOMINAL 2ND SEMICONDUCTOR DEVICE DIODE |
| 0.096 INCHES NOMINAL 3RD SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | UNMATCHED |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |