COMPONENT FUNCTION RELATIONSHIP | MATCHED |
COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
CRITICALITY CODE JUSTIFICATION | FEAT |
CURRENT RATING PER CHARACTERISTIC | 15.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
FUNCTION FOR WHICH DESIGNED | GENERAL PURPOSE |
INCLOSURE MATERIAL | GLASS ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL DIAMETER | 0.076 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
OVERALL LENGTH | 0.170 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 70.0 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL LENGTH | 1.000 INCHES MINIMUM ALL SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD ALL SEMICONDUCTOR DEVICE DIODE |