| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | BURN IN |
| FUNCTION FOR WHICH DESIGNED | MICROWAVE AND MIXER |
| INCLOSURE MATERIAL | METAL ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL CONFIGURATION | JUNCTION CONTACT ALL SEMICONDUCTOR DEVICE DIODE |
| INTERNAL JUNCTION CONFIGURATION | PN ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.220 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.735 INCHES MINIMUM AND 0.765 INCHES MAXIMUM ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | PRESS FIT ALL SEMICONDUCTOR DEVICE DIODE |
| PRECIOUS MATERIAL | GOLD |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | TWO OF THE FOUR DIODES WILL BE FORWARD DIODES AND TWO WILL BE REVERSE DIODES |
| SPECIFICATION/STANDARD DATA | 18876-10658352 MANUFACTURERS SOURCE CONTROL |
| TERMINAL TYPE AND QUANTITY | 2 PIN ALL SEMICONDUCTOR DEVICE DIODE |