| III SEMICONDUCTOR MATERIAL | SILICON |
| INCLOSURE MATERIAL | METAL |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| PROPRIETARY CHARACTERISTICS | NPAC |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| OVERALL DIAMETER | 0.230 INCHES NOMINAL |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/343 GOVERNMENT SPECIFICATION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 15.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 3.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| TEST DATA DOCUMENT | 80063-SM-A-696869 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CURRENT RATING PER CHARACTERISTIC | 40.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |