| DISSIPATION FACTOR AT REFERENCE TEMP IN PERCENT | 0.100 |
| BODY HEIGHT | 0.050 INCHES NOMINAL |
| BODY LENGTH | 0.080 INCHES NOMINAL |
| BODY STYLE | CHIP TYPE |
| BODY WIDTH | 0.050 INCHES NOMINAL |
| CAPACITANCE VALUE PER SECTION | 0.680 NANOFARADS SINGLE SECTION |
| CASE MATERIAL | CERAMIC |
| NONDERATED CONTINUOUS VOLTAGE RATING AND TYPE PER SECTION | 50.0 DC SINGLE SECTION |
| NONDERATED OPERATING TEMP | -55.0 DEG CELSIUS MINIMUM AND 125.0 DEG CELSIUS MAXIMUM |
| INSULATION RESISTANCE AT REFERENCE TEMP | 1000.0 MEGOHM-MICROFARADS |
| SCHEMATIC DIAGRAM DESIGNATOR | NO COMMON OR GROUNDED ELECTRODE(S) |
| RELIABILITY INDICATOR | NOT ESTABLISHED |
| TOLERANCE OF TEMP COEFFICIENT PER SECTION IN PPM PER DEG CELSIUS | -30.0/+30.0 SINGLE SECTION |
| TOLERANCE RANGE PER SECTION | -10.00/+10.00 PERCENT SINGLE SECTION |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 2 BONDING PAD |